منابع مشابه
Hysteresis modeling in graphene field effect transistors
Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi...
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We examine zero-temperature hysteresis in random-field XY and Heisenberg models in the zero-frequency limit of a cyclic driving field. Exact expressions for hysteresis loops are obtained in the mean-field approximation. These show rather unusual features. We also perform simulations of the two models on a simple-cubic lattice and compare them with the predictions of the mean-field theory.
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Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device...
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Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the ...
متن کاملHysteresis and Avalanches in the Random Field Ising Model
2002 Acknowledgments I am deeply indebted to my thesis advisers Deepak Dhar for his constant invaluable guidance and encouragement throughout the last five years. His patience and persistence, insights into various problems, critical thinking and insistence on clarity have been most useful and inspiring. My words will never be adequate to express my gratitude towards him. Mustansir has always b...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2014
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.126.28